Latest Advancements in Device and Package Technology for High Power, High Frequency Switching Device Session
Session Type: Lecture
Session Code: IS01
Location: Room 206
Date & Time: Tuesday March 06, 2018 (08:30 - 11:55)
Chair: Tim McDonald,
Ranbir Singh


    Papers are listed in the order they will be presented.

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1180 1 GaN Power ICs Enable Breakthroughs in Adapter Performance
Dan Kinzer
1162 1 Industry's First 1200V Half Bridge Module Based on GaN Technology
Sharon Apter, David Shapiro, Valery Verpinsky, Lev Stessin, Gregory...
1159 1 The Value of emode GaN HEMTs for High Density and High Efficiency Applications
Gerald Deboy, Matthias Kasper, Alfredo Medina, Steffen Metzger, Man...
1182 1 Trench Based SiC Power MOSFETs – an Example How to Merge Performance, Robustness and Further Application Relevant Features
Peter Friedrichs
1183 1 Improving Totem-Pole PFC and on Board Charger Performance with Next Generation Components
Anup Bhalla
1184 1 SiC Power MOSFETs for Emerging High Voltage Applications
Ranbir Singh
1164 1 Design of High Performance Power Conversion Systems for More Electric Aircrafts
Shweta Sanjeev